1994. 5. 20 1/2 semiconductor technical data KTB595 triple diffused pnp transistor revision no : 0 general purpose application. features high breakdown voltage : v ceo =-100v. low collector-emitter saturation voltage. : v ce(sat) =-2.0v(max.) complementary to ktd525. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current i c -5 a emitter current i e 5 a base current i b -0.5 a collector power dissipation (tc=25 1 ) p c 40 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 ma collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -100 - - v emitter-base breakdown voltage v (br)ebo i e =-10ma, i c =0 -5.0 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-1a 40 - 240 h fe (2) v ce =-5v, i c =-4a 20 - - collector-emitter saturation voltage v ce(sat) i c =-4a, i b =-0.4a - - -2.0 v base-emitter voltage v be v ce =-5v, i c =-4a - - -1.5 v transition frequency f t v ce =-5v, i c =-1a - 5.0 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 270 - pf note : h fe (1) classification r:40 80 , o:70 140 , y:120 240
1994. 5. 20 2/2 KTB595 revision no : 0 i - v cce collector-emitter voltage v (v) 0-1-2 c 0 collector current i (a) -1 safe operating area ce ce collector-emitter voltage v (v) -2 -0.1 c collector current i (a) 10 dc current gain h fe 500 -0.01 collector current i (a) c c fe h - i v - i ce(sat) c c collector current i (a) -0.01 -0.03 -0.03 ce(sat) collector-emitter saturation 10 collector power dissipation p (w) 0 c 25 0 ambient temperature ta ( c) pc - ta -3 -4 -5 -6 -7 -2 -3 -4 -5 common emitter tc =25 c i =-20ma b -50 -100 -150 -200 -250 0 50 75 100 125 150 20 30 40 50 tc =ta infinite heat sink -0.03 -0.1 -0.3 -1 -3 -10 30 50 100 300 common emitter v =-5v ce tc=75 c tc=25 c tc=-25 c voltage v (v) -0.1 -0.3 -1 -3 -10 -0.05 -0.1 -0.3 -0.5 -1 common emitter i /i =10 c b tc =75 c tc=25 c tc=-25 c -10 -30 -100 -300 -0.3 -0.5 -1 -3 -5 -10 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c i max (continuous) c 1m s 10ms 10 0ms 1s dc o pera t i o n (tc= 25 c) v max ceo -20 -2
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